J&R Chip Optoelectronics Co., Ltd. was established in June 2021, with its headquarters located in Baoji City, Shaanxi Province. Backed by a registered capital of RMB 100 million, As a large compound semiconductor R&D and manufacturing enterprise in the central and western regions of China. Spanning 88 acres, our facility houses international-standard production lines encompassing compound semiconductor epitaxy, wafer fabrication, chip packaging, and module assembly. We specialize in the R&D and manufacturing of optoelectronic, power, and RF chips, delivering high-performance, high-reliability, and cost-effective customized products and total solutions to clients worldwide. ...
2021Since
5+Offices
60%R&D Staff
60+Technology Patents
Name: 4-6 inch GaAs Epitaxial Wafers.
Type: VCSEL & EEL Structures.
Key Specifications: Available wavelengths include 660nm, 700nm, 760nm, 850nm, 940nm, 1070nm, and custom options.
Gallium Arsenide (GaAs) stands as a prime example of "Specialized, Sophisticated, Distinctive, and Innovative" (SSDI) materials. As an irreplacea
Product Name: Gallium Nitride (GaN) Epitaxial Wafers.
Product Type: HEMT, RF Devices, and Custom Structures.
Key Specifications: Optimized for Low Voltage, High Current applications.
Gallium nitride (GaN), as a third-generation semiconductor material, is a combination of "power" and "frequency", with extremely high breakdown field strength
Package size: 3.5 * 3.5 * 1.35mm.
Adopting highly reliable ceramic substrate packaging, with stable performance.
Welding method: eutectic/fixed.
Lead free packaging, compliant with ROHS standards.
Small size, low power consumption, and good directionality.
Application areas: mainly used in consumer electronics, automotive electronics, high-speed communication, medical beauty, intelligent industry, aerospace and other fields.
Package size T056.
Standardized metal airtight structure, excellent heat dissipation, high reliability, and stable optical performance.
It has the characteristics of low threshold current, high slope efficiency, narrow spectrum, and strong environmental adaptability.
Application areas: mainly used in consumer electronics, automotive electronics, high-speed communication, medical beauty, intelligent industry, aerospace and other fields.
To46 encapsulation structure.
High speed response, high gain, low junction capacitance, low noise.
The photosensitive surface is 500um.
The response spectral range is optional (400-1100nm, 635nm, 650nm, 905nm).
Optional light window (flat light window/spherical lens light window).
Application areas: mainly used in consumer electronics, automotive electronics, high-speed communication, medical beauty, intelligent industry, aerospace and other fields.
>
Leveraging compound semiconductor epitaxy and packaging technologies, we produce optoelectronic components and VCSEL chips to power 3D imaging and sensing systems.
>
Utilizing advanced compound semiconductor epitaxy and packaging lines, we manufacture high-performance optoelectronic chips that enable industrial automation and precision sensing systems.
>
Employing compound semiconductor packaging technology, we develop high-sensitivity photodetectors and laser modules for medical imaging and precision therapy equipment.
>
Adopting radiation-hardened compound semiconductor epitaxy and packaging processes, we develop robust optoelectronic devices to ensure reliable aerospace communications and high-precision sensing.
