As a third-generation semiconductor material, Gallium Nitride (GaN) masterfully combines high power with high frequency. It is characterized by an extremely high breakdown electric field, high electron saturation velocity, and superior thermal stability. GaN demonstrates dominant advantages in processing high voltage and large current loads. Fueled by the rollout of 5G/6G infrastructure and the proliferation of new energy vehicles, GaN is transitioning from a "specialty material" to the center stage of "mainstream power devices," widely deployed in AI server data centers, robotics, and 5G/6G base stations.
Product category and application: Gallium Nitride HEMT, RF chip
